PMCXB900UEL

PMCXB900UEL 20 V, complementary N/P-channel Trench MOSFET 28 June 2016 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low leakage current Trench MOSFET technology Very low threshold voltage for portable applications: VGS(th) = 0.7 V Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM 3. Applications Relay driver High-speed line driver Level shifter Power management in battery-driven portables 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions TR1 (N-channel) VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.5 V; Tamb = 25 °C TR2 (P-channel) VDS drain-source voltage Tj = 25 °C VGS gate-source voltage TR1 (N-channel), Static characteristics RDSon drain-source on-state VGS = 4.5 V; ID = 600 mA; Tj = 25 °C resistance [1] Min Typ Max Unit --8 -- 20 V 8V 600 mA --8 - -20 V 8V - 470 620 mΩ [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2. Nexperia PMCXB900UEL 20 V, complementary N/P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 so...