PMDPB70XPE
020 -6
20 V dual P-channel Trench MOSFET
Rev. 1 — 20 June 2012 Product data sheet
1. Product profile
1.1 Ge...
PMDPB70XPE
020 -6
20 V dual P-channel Trench
MOSFET
Rev. 1 — 20 June 2012 Product data sheet
1. Product profile
1.1 General description
Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
DF
N2
1.2 Features and benefits
Very fast switching Trench
MOSFET technology 2 kV ElectroStatic Discharge (ESD) protection
1.3 Applications
Relay driver High-speed line driver High-side load switch Switching circuits
1.4 Quick reference data
Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source
voltage gate-source
voltage drain current drain-source on-state resistance VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = -4.5 V; ID = -2 A; Tj = 25 °C
[1]
Quick reference data Parameter Conditions Tj = 25 °C Min -12 Typ 66 Max -20 12 -4.2 79 Unit V V A mΩ
Static characteristics (per transistor)
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
NXP Semiconductors
PMDPB70XPE
20 V dual P-channel Trench
MOSFET
2. Pinning information
Table 2. Pin 1 2 3 4 5 6 7 8 Pinning information Symbol Description S1 G1 D2 S2 G2 D1 D1 D2 source TR1 gate TR1 drain TR2 source TR2 gate TR2 drain TR1 drain TR1 drain TR2
1 2 3
S1 S2
017aaa260
Simplified outline
6 5 4
Graphic symbol
D1
D2
7
8
G1
G2
Transparent top view
DFN2020-6 (SOT1118)
3. Ordering information
Table 3. O...