PMDT290UCE

PMDT290UCE 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET Rev. 1 — 6 October 2011 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  Trench MOSFET technology  ESD protection up to 2 kV  AEC-Q101 qualified 1.3 Applications  Relay driver  High-speed line driver  Low-side loadswitch  Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions TR1 (N-channel), Static characteristics RDSon drain-source on-state VGS = 4.5 V; ID = 500 mA; Tj = 25 °C resistance TR2 (P-channel), Static characteristics RDSon drain-source on-state VGS = -4.5 V; ID = -400 mA; Tj = 25 °C resistance TR1 (N-channel) VDS drain-source voltage VGS gate-source voltage ID drain current TR2 (P-channel) Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = -4.5 V; Tamb = 25 °C [1] [1] Min - - -8 - -8 - [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2. Typ Max Unit 290 380 mΩ 0.67 0.85 Ω - 20 V - 8V - 800 mA - -20 V - 8V - -550 mA Nexperia PMDT290UCE 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning information Sym...