PMDT670UPE

SO T6 PMDT670UPE 20 V, 550 mA dual P-channel Trench MOSFET Rev. 1 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 66 1.2 Features and benefits  Very fast switching  Trench MOSFET technology  ESD protection up to 2 kV  AEC-Q101 qualified 1.3 Applications  Relay driver  High-speed line driver  High-side loadswitch  Switching circuits 1.4 Quick reference data Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.5 V; Tamb = 25 °C VGS = -4.5 V; ID = -400 mA; Tj = 25 °C [1] Quick reference data Parameter Conditions Tj = 25 °C Min -8 Typ 0.67 Max -20 8 -550 0.85 Unit V V mA Ω Static characteristics (per transistor) [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. NXP Semiconductors PMDT670UPE 20 V, 550 mA dual P-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning information Symbol Description S1 G1 D2 S2 G2 D1 source TR1 gate TR1 drain TR2 source TR2 gate TR2 drain TR1 1 2 3 S1 S2 G1 G2 Simplified outline 6 5 4 Graphic symbol D1 D2 SOT666 017aaa260 3. Ordering information Table 3. Ordering information Package Name PMDT670UPE Description plastic surface-mounted p...