PMDXB1200UPE

DFN1010B- 6 PMDXB1200UPE 30 V, dual P-channel Trench MOSFET 25 March 2015 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Per transistor VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = -4.5 V; Tamb = 25 °C Static characteristics (per transistor) RDSon drain-source on-state VGS = -4.5 V; ID = -410 mA; Tj = 25 °C resistance [1] Min Typ Max Unit --8 -- -30 8 -410 V V mA - 1.2 1.4 Ω [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. Scan or click this QR code to view the latest information for this product NXP Semiconductors PMDXB1200UPE 30 V, dual P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 7 D1 drain TR1 8 D2 drain TR2 Simplified outline 1 76 ...