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PMDXB600UNEL Datasheet

Part Number PMDXB600UNEL
Manufacturers nexperia
Logo nexperia
Description dual N-channel MOSFET
Datasheet PMDXB600UNEL DatasheetPMDXB600UNEL Datasheet (PDF)

PMDXB600UNEL 20 V, dual N-channel Trench MOSFET 28 June 2016 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low leakage current • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm • Exposed drain pad for excellent thermal conduction • ElectroStatic Discharge (ES.

  PMDXB600UNEL   PMDXB600UNEL






Part Number PMDXB600UNE
Manufacturers nexperia
Logo nexperia
Description Dual N-Channel MOSFET
Datasheet PMDXB600UNEL DatasheetPMDXB600UNE Datasheet (PDF)

PMDXB600UNE 20 V, dual N-channel Trench MOSFET 1 July 2015 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm • Exposed drain pad for excellent thermal conduction • ElectroStatic Discharge .

  PMDXB600UNEL   PMDXB600UNEL







Part Number PMDXB600UNE
Manufacturers NXP
Logo NXP
Description dual N-channel Trench MOSFET
Datasheet PMDXB600UNEL DatasheetPMDXB600UNE Datasheet (PDF)

DF N1 0 PMDXB600UNE 16 September 2013 10B -6 20 V, dual N-channel Trench MOSFET Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • • Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conductio.

  PMDXB600UNEL   PMDXB600UNEL







dual N-channel MOSFET

PMDXB600UNEL 20 V, dual N-channel Trench MOSFET 28 June 2016 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low leakage current • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm • Exposed drain pad for excellent thermal conduction • ElectroStatic Discharge (ESD) protection > 1 kV HBM • Drain-source on-state resistance RDSon = 470 mΩ 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Per transistor VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.5 V; Tamb = 25 °C Static characteristics (per transistor) RDSon drain-source on-state VGS = 4.5 V; ID = 600 mA; Tj = 25 °C resistance [1] Min Typ Max Unit --8 -- 20 V 8V 600 mA - 470 620 mΩ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. Nexperia PMDXB600UNEL 20 V, dual N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 7 D1 drain TR1 8 D2 drain TR2 Simplified outline 1 76 25 Graphic symbol D1 G1 8 34 .


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