PMDXB950UPE
20 V, dual P-channel Trench MOSFET
30 June 2015
Product data sheet
1. General description
Dual P-channel e...
PMDXB950UPE
20 V, dual P-channel Trench
MOSFET
30 June 2015
Product data sheet
1. General description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
Trench
MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 1.02 Ω
3. Applications
Relay driver High-speed line driver High-side load switch Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor
VDS drain-source
voltage Tj = 25 °C
VGS gate-source
voltage
ID
drain current
VGS = -4.5 V; Tamb = 25 °C
Static characteristics (per transistor)
RDSon
drain-source on-state VGS = -4.5 V; ID = -500 mA; Tj = 25 °C resistance
[1]
Min Typ Max Unit
--8 --
-20 8 -500
V V mA
- 1.02 1.4 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Nexperia
PMDXB950UPE
20 V, dual P-channel Trench
MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 7 D1 drain TR1 8 D2 drain TR2
Simplified outline
1 76 25
Graphic symbol
D...