PMDXB950UPE

PMDXB950UPE 20 V, dual P-channel Trench MOSFET 30 June 2015 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 1.02 Ω 3. Applications Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Per transistor VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = -4.5 V; Tamb = 25 °C Static characteristics (per transistor) RDSon drain-source on-state VGS = -4.5 V; ID = -500 mA; Tj = 25 °C resistance [1] Min Typ Max Unit --8 -- -20 8 -500 V V mA - 1.02 1.4 Ω [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. Nexperia PMDXB950UPE 20 V, dual P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 7 D1 drain TR1 8 D2 drain TR2 Simplified outline 1 76 25 Graphic symbol D...