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PMEG10020AELP

NXP

2A low leakage current Schottky barrier rectifier

SOD128 PMEG10020AELP 100 V, 2 A low leakage current Schottky barrier rectifier 7 May 2015 Product data sheet 1. Gen...


NXP

PMEG10020AELP

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SOD128 PMEG10020AELP 100 V, 2 A low leakage current Schottky barrier rectifier 7 May 2015 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Average forward current: IF(AV) ≤ 2 A Reverse voltage: VR ≤ 100 V Low forward voltage: VF = 710 mV High power capability due to clip-bonding technology Extremely low leakage current High temperature Tj ≤ 175 °C Small and flat lead SMD plastic package AEC-Q101 qualified 3. Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Reverse polarity protection Low power consumption applications 4. Quick reference data Table 1. Symbol IF(AV) VR VF Quick reference data Parameter average forward current reverse voltage forward voltage IR reverse current Conditions δ = 0.5; f = 20 kHz; Tsp ≤ 165 °C; square wave Tj = 25 °C IF = 2 A; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C VR = 100 V; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C Min Typ Max Unit - - 2A - - 100 V - 710 770 mV - 70 300 nA Scan or click this QR code to view the latest information for this product NXP Semiconductors PMEG10020AELP 100 V, 2 A low leakage current Schottky barrier rectifier 5. Pinning information Table 2. Pin 1 2 Pinning information Symbol Description K cathode[1] A a...




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