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PMEG10020ELR Datasheet

Part Number PMEG10020ELR
Manufacturers NXP
Logo NXP
Description 2A low leakage current Schottky barrier rectifier
Datasheet PMEG10020ELR DatasheetPMEG10020ELR Datasheet (PDF)

SOD123W PMEG10020ELR 100 V, 2 A low leakage current Schottky barrier rectifier 7 May 2015 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Average forward current: IF(AV) ≤ 2 A • Reverse voltage: VR ≤ 100 V • Low forward voltage: VF = 770 mV • High .

  PMEG10020ELR   PMEG10020ELR






Part Number PMEG10020ELR
Manufacturers nexperia
Logo nexperia
Description Schottky barrier rectifier
Datasheet PMEG10020ELR DatasheetPMEG10020ELR Datasheet (PDF)

PMEG10020ELR 100 V, 2 A low leakage current Schottky barrier rectifier 29 November 2017 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Average forward current: IF(AV) ≤ 2 A • Reverse voltage: VR ≤ 100 V • Low forward voltage: VF= 770 mV • High powe.

  PMEG10020ELR   PMEG10020ELR







2A low leakage current Schottky barrier rectifier

SOD123W PMEG10020ELR 100 V, 2 A low leakage current Schottky barrier rectifier 7 May 2015 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Average forward current: IF(AV) ≤ 2 A • Reverse voltage: VR ≤ 100 V • Low forward voltage: VF = 770 mV • High power capability due to clip-bonding technology • Extremely low leakage current IR = 40 nA • High temperature Tj ≤ 175 °C • AEC-Q101 qualified 3. Applications • Low voltage rectification • High efficiency DC-to-DC conversion • Switch mode power supply • Reverse polarity protection • Low power consumption applications 4. Quick reference data Table 1. Symbol IF(AV) VR VF Quick reference data Parameter average forward current reverse voltage forward voltage IR reverse current Conditions δ = 0.5; f = 20 kHz; Tsp ≤ 160 °C; square wave Tj = 25 °C IF = 2 A; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C VR = 100 V; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C Min Typ Max Unit - - 2A - - 100 V - 770 830 mV - 40 150 nA Scan or click this QR code to view the latest information for this product NXP Semiconductors PMEG10020ELR 100 V, 2 A low leakage current Schottky barrier rectifier 5. Pinning information Table 2. Pin 1 2 Pinning information Symbol Description K cathode[1] A anode Simplified outline 12 SOD.


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