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PMEG2002AESF

NXP

0.2 A low VF MEGA Schottky barrier rectifier

PMEG2002AESF 8 October 2013 20 V, 0.2 A low VF MEGA Schottky barrier rectifier Product data sheet 1. General descript...


NXP

PMEG2002AESF

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PMEG2002AESF 8 October 2013 20 V, 0.2 A low VF MEGA Schottky barrier rectifier Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection in a DSN0603-2 (SOD962-2) leadless ultra small Surface-Mounted Device (SMD) package. 2. Features and benefits Average forward current IF(AV) ≤ 0.2 A Reverse voltage VR ≤ 20 V Low forward voltage typ. VF 245 mV Low forward current typ. IF 10 µA Ultra small and leadless SMD package Package height typ. 0.3 mm 3. Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Low power consumption applications Ultra high-speed switching LED backlight for mobile application 4. Quick reference data Table 1. Symbol IF(AV) Quick reference data Parameter average forward current Conditions δ = 0.5 ; f = 20 kHz; Tamb = 115 °C; square wave δ = 0.5 ; f = 20 kHz; Tsp = 125 °C; square wave VR VF IR reverse voltage forward voltage reverse current [1] [1] Min - Typ 245 5 Max 0.2 0.2 20 310 - Unit A A V mV µA Tj = 25 °C IF = 10 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C VR = 10 V; Tj = 25 °C Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. Scan or click this QR code to view the latest information for this product Free Datasheet http://www.datasheet4u.com/ NXP Semiconductors PMEG2002AESF 20 V, 0.2 A low VF MEGA Schottky barrier rectif...




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