PMEG3010ESB

PMEG3010ESB 30 V, 1 A low VF MEGA Schottky barrier rectifier 1 July 2015 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection in a leadless ultra small DSN1006-2 (SOD993) Surface-Mounted Device (SMD) package. 2. Features and benefits Average forward current: IF(AV) ≤ 1 A Reverse voltage: VR ≤ 30 V Low forward voltage, typical: VF = 495 mV Low reverse current, typical: IR = 12 µA Package height typ. 270 µm 3. Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Low power consumption applications Ultra high-speed switching LED backlight for mobile application 4. Quick reference data Table 1. Symbol IF(AV) VR VF Quick reference data Parameter average forward current reverse voltage forward voltage IR reverse current Conditions δ = 0.5; f = 20 kHz; Tsp ≤ 140 °C; square wave Tj = 25 °C IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C VR = 10 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C VR = 30 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C Min Typ Max Unit - - 1A - - 30 V - 495 565 mV - 1.6 5 µA - 12 45 µA Scan or click this QR code to view the latest information for this product NXP Semiconductors PMEG3010ESB 30 V, 1 A low VF MEGA Schottky barrier rectifier 5. Pinning information Table 2. Pin 1 2 Pinning information Symbol Description K cathode[1] A anode Simplified outline 12 Graphic symbol 1 2 ...