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PMEG3050EP

NXP

MEGA Schottky barrier rectifier

PMEG3050EP 5 A low VF MEGA Schottky barrier rectifier Rev. 01 — 10 December 2009 Product data sheet 1. Product profile...


NXP

PMEG3050EP

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Description
PMEG3050EP 5 A low VF MEGA Schottky barrier rectifier Rev. 01 — 10 December 2009 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features „ Average forward current: IF(AV) ≤ 5 A „ Reverse voltage: VR ≤ 30 V „ Low forward voltage „ High power capability due to clip-bond technology „ AEC-Q101 qualified „ Small and flat lead SMD plastic package 1.3 Applications „ Low voltage rectification „ High efficiency DC-to-DC conversion „ Switch Mode Power Supply (SMPS) „ Reverse polarity protection „ Low power consumption applications 1.4 Quick reference data Table 1. Quick reference data Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max IF(AV) average forward current square wave; δ = 0.5; f = 20 kHz Tamb ≤ 35 °C [1] - - 5 Tsp ≤ 130 °C --5 VR reverse voltage - - 30 VF forward voltage IF = 5 A - 315 360 IR reverse current VR = 30 V - 2.6 8 [1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. Unit A A V mV mA NXP Semiconductors PMEG3050EP 5 A low VF MEGA Schottky barrier rectifier 2. Pinning information Table 2. Pin 1 2 Pinning Description cathode anode [1] The marking bar indicates the cathode. 3. Ordering information Simplified outline [1] 12 Graphic s...




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