PMEG40T10ER
40 V, 1 A low VF Trench MEGA Schottky barrier rectifier
6 March 2018
Product data sheet
1. General description
Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier encapsulated in a CFP3 (SOD123W) small and flat lead Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
• Average forward current: IF(AV) ≤ 1 A • Reverse voltage: VR ≤ 40 V • Low forward voltage • Low leakage current due to Trench MEGA Schottky technology • High power cap.
MEGA Schottky barrier rectifier
PMEG40T10ER
40 V, 1 A low VF Trench MEGA Schottky barrier rectifier
6 March 2018
Product data sheet
1. General description
Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier encapsulated in a CFP3 (SOD123W) small and flat lead Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
• Average forward current: IF(AV) ≤ 1 A • Reverse voltage: VR ≤ 40 V • Low forward voltage • Low leakage current due to Trench MEGA Schottky technology • High power capability due to clip-bonding technology • Small and flat lead SMD plastic package • Capable for reflow and wave soldering • AEC-Q101 qualified
3. Applications
• Low voltage rectification • High efficiency DC-to-DC conversion • Switch mode power supply • Freewheeling application • Reverse polarity protection • Low power consumption application
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
IF(AV)
average forward current
VR reverse voltage
VF forward voltage
IR reverse current
Conditions
δ = 0.5 ; f = 20 kHz; Tsp ≤ 170 °C; square wave
Tj = 25 °C IF = 1 A; Tj = 25 °C; pulsed VR = 10 V; Tj = 25 °C; pulsed VR = 40 V; Tj = 25 °C; pulsed
[1] Very short pulse, in order to maintain a stable junction temperature.
Min Typ Max Unit - - 1A
[1] [1] [1] -
- 40 V 400 460 mV 3 11.5 µA 6 22 µA
Nexperia
PMEG40T10ER
40 V, 1 A low VF Trench MEGA Schottky barrier rectifier
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 K cathode 2 A anod.