PMEG6010AESB
60 V, 1 A low VF MEGA Schottky barrier rectifier
1 September 2015
Product data sheet
1. General descrip...
PMEG6010AESB
60 V, 1 A low VF MEGA Schottky barrier rectifier
1 September 2015
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection in a leadless ultra small DSN1006-2 (SOD993) Surface-Mounted Device (SMD) package.
2. Features and benefits
Average forward current: IF(AV) ≤ 1 A Reverse
voltage: VR ≤ 60 V Low forward
voltage, typical: VF = 525 mV Low reverse current, typical: IR = 185 µA Package height typ. 270 µm
3. Applications
Low
voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Low power consumption applications Ultra high-speed switching LED backlight for mobile application
4. Quick reference data
Table 1. Symbol IF(AV)
VR VF
Quick reference data Parameter average forward current
reverse
voltage
forward
voltage
IR reverse current
Conditions
δ = 0.5 ; f = 20 kHz; Tsp ≤ 140 °C; square wave
Tj = 25 °C
IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C
VR = 30 V; tp ≤ 3 ms; δ ≤ 0.3 ; Tj = 25 °C
VR = 60 V; tp ≤ 3 ms; δ ≤ 0.3 ; Tj = 25 °C
Min Typ Max Unit - - 1A
- - 60 V - 525 625 mV
- 28 100 µA
- 185 650 µA
Nexperia
PMEG6010AESB
60 V, 1 A low VF MEGA Schottky barrier rectifier
5. Pinning information
Table 2. Pin 1 2
Pinning information Symbol Description K cathode[1] A anode
Simplified outline
12
Graphic symbol
1
2
sym001
Transparent top view
DSN1006-2 (SOD993)
[1] The marking bar indicat...