PMEG6010ELR

PMEG6010ELR 8 November 2013 SO D 123 W 60 V, 1 A low leakage current Schottky barrier rectifier Preliminary data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Average forward current: IF(AV) ≤ 1 A Reverse voltage: VR ≤ 60 V Extremely low leakage current Low forward voltage High power capability due to clip-bonding technology Small and flat lead SMD plastic package AEC-Q101 qualified High temperature Tj ≤ 175 °C 3. Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Reverse polarity protection Low power consumption applications 4. Quick reference data Table 1. Symbol IF(AV) VR VF IR Quick reference data Parameter average forward current reverse voltage forward voltage reverse current Conditions δ = 0.5 ; f = 20 kHz; Tsp ≤ 170 °C; square wave Tj = 25 °C IF = 1 A; Tj = 25 °C Tj = 25 °C; VR = 60 V; tp ≤ 300 µs; δ ≤ 0.02 ; pulsed 605 90 60 660 300 V mV nA Min Typ Max 1 Unit A Scan or click this QR code to view the latest information for this product NXP Semiconductors PMEG6010ELR 60 V, 1 A low leakage current Schottky barrier rectifier 5. Pinning information Table 2. Pin 1 2 Pinning information Symbol Description K A cathode[1] anode Simplified outline 1 2 Graphic sy...