PMEM4020ND

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D302 PMEM4020ND NPN transistor/Schottky-diode module Product specification 2003 Nov 10 Philips Semiconductors Product specification NPN transistor/Schottky-diode module FEATURES 600 mW total power dissipation High current capability Reduces required PCB area Reduced pick and place costs Small plastic SMD package. Transistor: Low collector-emitter saturation voltage. Diode: Ultra high-speed switching Very low forward voltage Guard ring protected. APPLICATIONS DC-to-DC converters Inductive load drivers MOSFET drivers. DESCRIPTION Combination of an NPN transistor with low VCEsat and high current capability and a planar Schottky barrier diode with an integrated guard ring for stress protection in a SOT457 (SC-74) small plastic package. PNP complement: PMEM4020PD. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PMEM4020ND − DESCRIPTION plastic surface mounted package; 6 leads Marking code: B6. handbook, halfpage 6 PMEM4020ND PINNING PIN 1 2 3 4 5 6 emitter not connected cathode anode base collector DESCRIPTION 5 4 4 5 1 3 6 1 2 3 MGU865 Fig.1 Simplified outline (SOT457) and symbol. VERSION SOT457 2003 Nov 10 2 Philips Semiconductors Product specification NPN transistor/Schottky-diode module LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL NPN transistor VCBO VCEO VEBO IC collector-base voltage collector-emitter voltage emitter-base voltag...