PMGD175XNE

PMGD175XNE 30 V, Dual N-channel Trench MOSFET 15 April 2016 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (TSSOP6) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Per transistor VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s Static characteristics (per transistor) RDSon drain-source on-state VGS = 4.5 V; ID = 0.9 A; Tj = 25 °C resistance Min Typ Max Unit -- -12 - [1] - - 30 V 12 V 0.95 A - 211 252 mΩ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Nexperia PMGD175XNE 30 V, Dual N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 Simplified outline 654 Graphic symbol D1 D2 123 TSSOP6 (SOT363) G1 G2 S1 S2 017aaa256 6. Ordering information Table 3. Ordering information Type number Package Name PMGD175XNE TSSOP6 Description plastic ...