PMGD290UCEA

PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 28 March 2014 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Trench MOSFET technology 2 kV ESD protection AEC-Q101 qualified 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits Automotive applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions TR1 (N-channel), Static characteristics RDSon drain-source on-state VGS = 4.5 V; ID = 500 mA; Tj = 25 °C resistance TR2 (P-channel), Static characteristics RDSon drain-source on-state VGS = -4.5 V; ID = -400 mA; Tj = 25 °C resistance TR1 (N-channel) VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.5 V; Tamb = 25 °C TR2 (P-channel) VDS drain-source voltage Tj = 25 °C [1] Min Typ Max Unit - 290 380 mΩ - 670 850 mΩ --8 -- -- 20 V 8V 725 mA -20 V Scan or click this QR code to view the latest information for this product NXP Semiconductors PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET Symbol VGS ID Parameter gate-source voltage drain current Conditions VGS = -4.5 V; Tamb = 25 °C Min Typ Max Unit -8 - 8V [1] - - -500 mA [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated an...