PMH1200UPE

PMH1200UPE 30 V, P-channel Trench MOSFET 6 February 2023 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = -4.5 V; Tamb = 25 °C [1] Static characteristics RDSon drain-source on-state VGS = -4.5 V; ID = -410 mA; Tj = 25 °C resistance Min Typ Max - - -30 -10 - 10 - - -520 - 1.3 1.6 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm2. Unit V V mA Ω Nexperia 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain PMH1200UPE 30 V, P-channel Trench MOSFET Simplified outline 2 1 3 Graphic symbol D G Transparent top view DFN0606-3 (SOT8001) S 017aaa259 6. Ordering information Table 3. Ordering information Type number Package Name PMH1200UPE DFN0606...