PMH600UNE

PMH600UNE 20 V, N-channel Trench MOSFET 8 March 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 1 kV HBM Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 600 mA; Tj = 25 °C [1] Min Typ Max - - 20 -8 - 8 - - 800 - 470 620 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm2. Unit V V mA mΩ Nexperia 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain PMH600UNE 20 V, N-channel Trench MOSFET Simplified outline 21 Graphic symbol D G 3 Transparent top view DFN0606-3 (SOT8001) S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name PMH600UNE DFN0606-3 Description plastic, leadless ul...