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PMN25ENEA Datasheet

Part Number PMN25ENEA
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet PMN25ENEA DatasheetPMN25ENEA Datasheet (PDF)

PMN25ENEA 30 V, N-channel Trench MOSFET 14 March 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Extended temperature range Tj = 175 °C • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) • AEC-Q101 qualified 3. Applications • Relay driver • High.

  PMN25ENEA   PMN25ENEA






Part Number PMN25ENE
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet PMN25ENEA DatasheetPMN25ENE Datasheet (PDF)

PMN25ENE 30 V, N-channel Trench MOSFET 16 April 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Logic-level compatible • Very fast switching • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switchin.

  PMN25ENEA   PMN25ENEA







N-channel MOSFET

PMN25ENEA 30 V, N-channel Trench MOSFET 14 March 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Extended temperature range Tj = 175 °C • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 6.4 A; Tj = 25 °C Min Typ Max - - 30 -20 - 20 [1] - - 6.4 - 17 24 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2. Unit V V A mΩ Nexperia 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain PMN25ENEA 30 V, N-channel Trench MOSFET Simplified outline 654 Graphic symbol D 123 TSOP6 (SOT457) G S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name PMN25ENEA TSOP6 Description plastic surface-mounted package (TSOP6); 6 leads Version SOT457 7. Mar.


2019-07-28 : NX3008CBKS    NX138BKW    NX138BKS    NX138BK    NX138AK    BUK7D25-40E    NX1029X    BUK6D81-80E    PSMN015-60PS    PSMN013-100BS   


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