PMN40ENE

PMN40ENE 30 V, N-channel Trench MOSFET 24 May 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching Enhanced power dissipation capability of 1240 mW ElectroStatic Discharge (ESD) protection > 1 kV HBM 3. Applications LED driver Power management Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 10 V; Tamb = 25 °C; t ≤ 5 s VGS = 10 V; ID = 4.5 A; Tj = 25 °C Min Typ Max Unit - - 30 V -20 - 20 V [1] - - 5.7 A - 30 38 mΩ [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. Nexperia PMN40ENE 30 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain Simplified outline 654 Graphic symbol D 123 TSOP6 (SOT457) G S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name PMN40ENE TSOP6 Description plastic surface-mounted package (TSOP6); 6 leads Version SOT457 7. Marking Table 4. Marking codes Typ...