PMPB11EN

PMPB11EN MD -6 30 V N-channel Trench MOSFET Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. DF N2 020 1.2 Features and benefits  Trench MOSFET technology  Very fast switching  Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm  Exposed drain pad for excellent thermal conduction  Tin-plated 100 % solderable side pads for optical solder inspection 1.3 Applications  Charging switch for portable devices  DC-to-DC converters  Power management in battery-driven portables  Hard disk and computing power management 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 10 V; Tamb = 25 °C; t ≤ 5 s VGS = 10 V; ID = 9 A; Tj = 25 °C [1] Conditions Tj = 25 °C Min -20 - Typ 12 Max 30 20 13 14.5 Unit V V A mΩ Static characteristics [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. NXP Semiconductors PMPB11EN 30 V N-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 4 5 6 7 8 Pinning information Symbol Description D D G S D D D S drain drain gate source drain drain drain source 3 8 4 S 017aaa253 Simplified outline Graphic sym...