PMPB12UNE

PMPB12UNE 20 V, N-channel Trench MOSFET 12 April 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Exposed drain pad for excellent thermal conduction Tin-plated 100% solderable side pads for optical solder inspection ElectroStatic Discharge (ESD) protection > 1 kV HBM 3. Applications LED driver Power management Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5 V; ID = 7.9 A; Tj = 25 °C Min Typ Max Unit - - 20 V -12 - 12 V [1] - - 11.4 A - 12 16 mΩ [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. Nexperia PMPB12UNE 20 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain 7 D drain 8 S source Simplified outline Graphic symbol 16 7 25 384 Transparent top view DFN2020MD-6 (SOT1220) G D S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name D...