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PMPB12UNEA Datasheet

Part Number PMPB12UNEA
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet PMPB12UNEA DatasheetPMPB12UNEA Datasheet (PDF)

PMPB12UNEA 20 V, N-channel Trench MOSFET 26 March 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Trench MOSFET technology • Side wettable flanks for optical solder inspection • ElectroStatic Discharge (ESD) protection > 500 V HBM (class H1B) • AEC-Q101 qualified .

  PMPB12UNEA   PMPB12UNEA






Part Number PMPB12UNE
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet PMPB12UNEA DatasheetPMPB12UNE Datasheet (PDF)

PMPB12UNE 20 V, N-channel Trench MOSFET 12 April 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • Exposed drain pad for excellent thermal conduction • Tin-plated 100% solderable side pads for optical solder inspection • ElectroStatic Disc.

  PMPB12UNEA   PMPB12UNEA







N-channel MOSFET

PMPB12UNEA 20 V, N-channel Trench MOSFET 26 March 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Trench MOSFET technology • Side wettable flanks for optical solder inspection • ElectroStatic Discharge (ESD) protection > 500 V HBM (class H1B) • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 7.9 A; Tj = 25 °C Min Typ Max Unit - - 20 V -12 - 12 V [1] - - 7.9 A - 13 18 mΩ [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. Nexperia PMPB12UNEA 20 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain 7 D drain 8 S source Simplified outline Graphic symbol 16 7 25 384 Transparent top view DFN2020MD-6 (SOT1220) G D S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMPB12UNEA D.


2019-07-28 : NX3008CBKS    NX138BKW    NX138BKS    NX138BK    NX138AK    BUK7D25-40E    NX1029X    BUK6D81-80E    PSMN015-60PS    PSMN013-100BS   


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