PMPB20XPEA
20 V, P-channel Trench MOSFET
27 March 2018
Product data sheet
1. General description
P-channel enhancement...
PMPB20XPEA
20 V, P-channel Trench
MOSFET
27 March 2018
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
Low threshold
voltage Trench
MOSFET technology Side wettable flanks for optical solder inspection ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) AEC-Q101 qualified
3. Applications
Relay driver High-speed line driver High-side load switch Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max
VDS drain-source
voltage Tj = 25 °C
- - -20
VGS gate-source
voltage
-12 -
12
ID
drain current
VGS = -4.5 V; Tamb = 25 °C
[1] - - -7.2
Static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -7.2 A; Tj = 25 °C resistance
- 19 23.5
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Unit V V A
mΩ
Nexperia
PMPB20XPEA
20 V, P-channel Trench
MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain 7 D drain 8 S source
Simplified outline
Graphic symbol
16 7
25
384
Transparent top view
DFN2020MD-6 (SOT1220)
G
D
S 017aaa259
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
De...