PMPB27EP
30 V, single P-channel Trench MOSFET
10 September 2012
Product data sheet
1. Product profile
1.1 General des...
PMPB27EP
30 V, single P-channel Trench
MOSFET
10 September 2012
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits Trench
MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Tin-plated 100 % solderable side pads for optical solder inspection
1.3 Applications Charging switch for portable devices DC-to-DC converters Power management in battery-driven portable devices Hard disk and computing power management
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source
voltage
VGS gate-source
voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = -10 V; Tamb = 25 °C; t ≤ 5 s
VGS = -10 V; ID = -6.1 A; Tj = 25 °C
Min Typ Max Unit - - -30 V
-20 -
20 V
[1] - - -8.8 A
- 24 29 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Nexperia
PMPB27EP
30 V, single P-channel Trench
MOSFET
2. Pinning information
Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain 7 D drain 8 S source
Simplified outline
16 7
25
Graphic symbol
D
G
384
T...