PMPB30XPE

PMPB30XPE 20 V, P-channel Trench MOSFET 26 April 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 °C Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Tin-plated 100 % solderable side pads for optical solder inspection ElectroStatic Discharge (ESD) protection > 2 kV HBM Trench MOSFET technology 3. Applications Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max VDS drain-source voltage Tj = 25 °C - - -20 VGS gate-source voltage -12 - 8 ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -8.5 Static characteristics RDSon drain-source on-state VGS = -4.5 V; ID = -6.2 A; Tj = 25 °C resistance - 29 34 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided, tin-plated and mouting pad for drain 6 cm2. Unit V V A mΩ Nexperia PMPB30XPE 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain 7 D drain 8 S source Simplified outline Graphic symbol 16 7 25 384 Transparent top view DFN2020MD-6 (SOT1220) G D S 017aaa259 6. Ordering infor...