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PMPB43XPE Datasheet

Part Number PMPB43XPE
Manufacturers NXP
Logo NXP
Description P-Channel MOSFET
Datasheet PMPB43XPE DatasheetPMPB43XPE Datasheet (PDF)

DFN2020MD-6 PMPB43XPE 20 V, single P-channel Trench MOSFET 26 November 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • 1 kV ESD protected • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Exposed drain pad for excellent thermal conduction • Tin-plated 100 % solderab.

  PMPB43XPE   PMPB43XPE






Part Number PMPB43XPE
Manufacturers nexperia
Logo nexperia
Description P-channel MOSFET
Datasheet PMPB43XPE DatasheetPMPB43XPE Datasheet (PDF)

PMPB43XPE 20 V, single P-channel Trench MOSFET 26 November 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • 1 kV ESD protected • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Exposed drain pad for excellent thermal conduction • Tin-plated 100 % solderable side pads .

  PMPB43XPE   PMPB43XPE







P-Channel MOSFET

DFN2020MD-6 PMPB43XPE 20 V, single P-channel Trench MOSFET 26 November 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • 1 kV ESD protected • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Exposed drain pad for excellent thermal conduction • Tin-plated 100 % solderable side pads for optical solder inspection 3. Applications • Charging switch for portable devices • DC-to-DC converters • Power management in battery-driven portable devices • Hard disk and computing power management 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = -4.5 V; Tamb = 25 °C VGS = -4.5 V; ID = -5 A; Tj = 25 °C Min Typ Max Unit - - -20 V -12 - 12 V [1] - - -5 A - 39 48 mΩ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Scan or click this QR code to view the latest information for this product NXP Semiconductors PMPB43XPE 20 V, single P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain 7 D drain 8 S sou.


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