PMPB55ENEA
60 V, N-channel Trench MOSFET
6 June 2016
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Trench MOSFET technology • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Tin-plated 100 % solderable side pads for optical solder inspection • ElectroStatic Discharge (E.
N-channel MOSFET
PMPB55ENEA
60 V, N-channel Trench MOSFET
6 June 2016
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Trench MOSFET technology • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Tin-plated 100 % solderable side pads for optical solder inspection • ElectroStatic Discharge (ESD) protection > 2 kV • AEC-Q101 qualified
3. Applications
• Relay driver • High-speed line driver • Low-side load switch • Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; ID = 4 A; Tj = 25 °C
Min Typ Max
- - 60
-20 -
20
[1] - - 4
- 42 56
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.
Unit V V A
mΩ
Nexperia
PMPB55ENEA
60 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain 7 D drain 8 S source
Simplified outline
Graphic symbol
16 7
25
384
Transparent top view
DFN2020MD-6 (SOT1220)
G
D
S 017aaa255
6. Ordering information
Table 3. Ordering information.