DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D187
PMST3906 PNP switching transistor
Product specification Super...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D187
PMST3906 PNP switching transistor
Product specification Supersedes data of 1997 May 27 1999 Apr 22
Philips Semiconductors
Product specification
PNP switching transistor
FEATURES Low current (max. 100 mA) Low
voltage (max. 40 V). APPLICATIONS Switching in telephony and professional communication equipment.
handbook, halfpage
PMST3906
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3
DESCRIPTION
3
PNP switching transistor in a SOT323 plastic package. NPN complement: PMST3904. MARKING TYPE NUMBER PMST3906 Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗2A
1 Top view 2
1 2
MAM048
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base
voltage collector-emitter
voltage emitter-base
voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. −40 −40 −6 −100 −200 −100 200 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT
1999 Apr 22
2
Philips Semiconductors
Product specification
PNP switching transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor moun...