DISCRETE SEMICONDUCTORS
DATA SHEET
ndbook, halfpage
M3D102
PMSTA05; PMSTA06 NPN general purpose transistors
Product da...
DISCRETE SEMICONDUCTORS
DATA SHEET
ndbook, halfpage
M3D102
PMSTA05; PMSTA06 NPN general purpose transistors
Product data sheet Supersedes data of 1997 Jun 16
1999 Apr 29
NXP Semiconductors
NPN general purpose transistors
Product data sheet
PMSTA05; PMSTA06
FEATURES High current (max. 500 mA) Low
voltage (max. 80 V).
APPLICATIONS Primarily intended for telephony and professional
communication equipment.
PINNING
PIN 1 2 3
base emitter collector
DESCRIPTION
DESCRIPTION
NPN transistor in a SOT323 plastic package. PNP complements: PMSTA55 and PMSTA56.
MARKING
TYPE NUMBER PMSTA05 PMATA06
MARKING CODE(1) ∗1H ∗1G
Note
1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia.
handbook, halfpage
3
1 Top view
1
2
MAM062
3 2
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO
VCEO
VEBO IC ICM IBM Ptot Tstg Tj Tamb
PARAMETER
collector-base
voltage PMSTA05 PMSTA06
collector-emitter
voltage PMSTA05 PMSTA06
emitter-base
voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature
CONDITIONS open emitter open base open collector
Tamb ≤ 25 °C
MIN. MAX. UNIT
− 60 V − 80 V
− 60 V − 80 V −4V − 500 mA − 500 mA − 500 mA − 200 mW −65 +150 °C − 150 °C −65 +150 °C
1999 Apr 29
2
NXP Semiconductors
NPN general purpose transistors
Product data sheet
PMSTA05; PMSTA06
THERMAL CHARACT...