PMT280ENEA

PMT280ENEA 100 V N-channel Trench MOSFET 14 July 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified 3. Applications Relay driver LED backlight driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 1.5 A; Tj = 25 °C Min Typ Max Unit - - 100 V -20 - 20 V [1] - - 1.5 A - 285 385 mΩ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2. Nexperia PMT280ENEA 100 V N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain 3 S source 4 D drain Simplified outline 4 123 SC-73 (SOT223) Graphic symbol D G S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name PMT280ENEA SC-73 Description plastic surface-mounted package with increased heatsink; 4 leads Version SOT223 7. Marking Table 4. Marking code...