PMV20EN
30 V, N-channel Trench MOSFET
5 July 2018
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Logic level compatible • Very fast switching • Trench MOSFET technology • Enhanced power dissipation capability of 1200 mW
3. Applications
• Relay driver • High-speed line driver • Low-side load switch • Switching c.
N-Channel MOSFET
PMV20EN
30 V, N-channel Trench MOSFET
5 July 2018
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Logic level compatible • Very fast switching • Trench MOSFET technology • Enhanced power dissipation capability of 1200 mW
3. Applications
• Relay driver • High-speed line driver • Low-side load switch • Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
VGS = 10 V; ID = 6 A; Tj = 25 °C
Min Typ Max
- - 30
-20 -
20
[1] - - 7.6
- 17 21
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 c.