SOT23
PMV250EPEA
40 V, P-channel Trench MOSFET
20 June 2014
Product data sheet
1. General description
P-channel enhan...
SOT23
PMV250EPEA
40 V, P-channel Trench
MOSFET
20 June 2014
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
Logic-level compatible Very fast switching Trench
MOSFET technology 1 kV ESD protected AEC-Q101 qualified
3. Applications
Relay driver High-speed line driver High-side load switch Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source
voltage
VGS gate-source
voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = -10 V; Tamb = 25 °C
VGS = -10 V; ID = -1.3 A; Tj = 25 °C
Min Typ Max Unit
- - -40 V
-20 -
20 V
[1] - - -1.5 A
- 180 240 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
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NXP Semiconductors
PMV250EPEA
40 V, P-channel Trench
MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain
Simplified outline
3
Graphic symbol
D
12
TO-236AB (SOT23)
G
S 017aaa259
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMV250EPEA
TO-236AB
Description plastic surface-mounted package; 3 leads
Version SOT23
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