PMV25ENEA

SOT23 PMV25ENEA 30 V, N-channel Trench MOSFET 26 February 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 5.5 A; Tj = 25 °C Min Typ Max Unit - - 30 V -20 - 20 V [1] - - 5.5 A - 17 24 mΩ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2. Scan or click this QR code to view the latest information for this product NXP Semiconductors PMV25ENEA 30 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline 3 Graphic symbol D 12 TO-236AB (SOT23) G S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name PMV25ENEA TO-236AB Description plastic surface-mounted package; ...