PMV37ENEA
60 V, N-channel Trench MOSFET
21 May 2019
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Logic-level compatible • Extended temperature range Tj = 175 °C • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) • AEC-Q101 qualified
3. Applications
• Relay driver • Hig.
N-channel MOSFET
PMV37ENEA
60 V, N-channel Trench MOSFET
21 May 2019
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Logic-level compatible • Extended temperature range Tj = 175 °C • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) • AEC-Q101 qualified
3. Applications
• Relay driver • High-speed line driver • Low-side load switch • Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; ID = 3.5 A; Tj = 25 °C
Min Typ Max
- - 60
-20 -
20
[1] - - 3.5
- 37 49
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.
Unit V V A
mΩ
Nexperia
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain
PMV37ENEA
60 V, N-channel Trench MOSFET
Simplified outline
3
Graphic symbol
D
12
TO-236AB (SOT23)
G
S 017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMV37ENEA
TO-236AB
Description plastic surface-mounted package; 3 leads
Version SOT23
7. Marking
Table 4. Marking codes Type num.