PMV42ENE
30 V, N-channel Trench MOSFET
16 March 2016
Product data sheet
1. General description
N-channel enhancement m...
PMV42ENE
30 V, N-channel Trench
MOSFET
16 March 2016
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
Logic level compatible Low on-state resistance Trench
MOSFET technology ElectroStatic Discharge (ESD) protection > 1 kV HBM Enhanced power dissipation capability of 1 W
3. Applications
Relay driver High-speed line driver Low-side loadswitch Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source
voltage
VGS gate-source
voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
VGS = 10 V; ID = 4.4 A; Tj = 25 °C
Min Typ Max Unit
- - 30 V
-20 -
20 V
[1] - - 5.1 A
- 29 36 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Nexperia
PMV42ENE
30 V, N-channel Trench
MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain
Simplified outline
3
Graphic symbol
D
12
TO-236AB (SOT23)
G
S 017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMV42ENE
TO-236AB
Description plastic surface-mounted package; 3 leads
Version SOT23
7. Marking
Table 4. Marking codes Type number
PMV42ENE
Marki...