PMV45EN2

PMV45EN2 30 V, N-channel Trench MOSFET 10 January 2017 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology Enhanced power dissipation capability of 1115 mW 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 10 V; Tamb = 25 °C; t ≤ 5 s VGS = 10 V; ID = 4.1 A; Tj = 25 °C Min Typ Max - - 30 -20 - [1] - - 20 5.1 - 35 42 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Unit V V A mΩ Nexperia PMV45EN2 30 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline 3 12 TO-236AB (SOT23) Graphic symbol D G S 017aaa253 6. Ordering information Table 3. Ordering information Type number Package Name PMV45EN2 TO-236AB Description plastic surface-mounted package; 3 leads Version SOT23 7. Marking Table 4. Marking codes Type number PMV45EN2 [1] % = placeholder for manufactu...