PMXB43UNE
20 V, N-channel Trench MOSFET
19 September 2013
Product data sheet
1. General description
N-channel enhancem...
PMXB43UNE
20 V, N-channel Trench
MOSFET
19 September 2013
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
Trench
MOSFET technology Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction Very low Drain-Source on-state resistance RDSon = 42 mΩ in high density 1 kV ESD protected
3. Applications
Low-side load switch and charging switch for portable devices Power management in battery-driven portables LED driver DC-to-DC converters
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source
voltage
VGS gate-source
voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; ID = 3.2 A; Tj = 25 °C
Min Typ Max Unit
- - 20 V
-8 -
8V
[1] - - 3.2 A
- 42 54 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Nexperia
PMXB43UNE
20 V, N-channel Trench
MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain 4 D drain
Simplified outline
1
Graphic symbol
D
43
G
2
Transparent top view
DFN1010D-3 (SOT1215)
S 017aaa255
6. Ordering information
...