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PMXB75UPE Datasheet

Part Number PMXB75UPE
Manufacturers nexperia
Logo nexperia
Description P-channel MOSFET
Datasheet PMXB75UPE DatasheetPMXB75UPE Datasheet (PDF)

PMXB75UPE 20 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm • Exposed drain pad for excellent thermal conduction • ElectroStatic Discharge (ESD) protec.

  PMXB75UPE   PMXB75UPE






Part Number PMXB75UPE
Manufacturers NXP
Logo NXP
Description P-channel Trench MOSFET
Datasheet PMXB75UPE DatasheetPMXB75UPE Datasheet (PDF)

DFN1010D-3 PMXB75UPE 20 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm • Exposed drain pad for excellent thermal conduction • ElectroStatic Discharge .

  PMXB75UPE   PMXB75UPE







P-channel MOSFET

PMXB75UPE 20 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm • Exposed drain pad for excellent thermal conduction • ElectroStatic Discharge (ESD) protection 1.5 kV HBM • Drain-source on-state resistance RDSon = 69 mΩ • Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V 3. Applications • High-side load switch and charging switch for portable devices • Power management in battery driven portables • LED driver • DC-to-DC converter 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -8 - 8V ID drain current VGS = -4.5 V; Tamb = 25 °C [1] - - -2.9 A Static characteristics RDSon drain-source on-state VGS = -4.5 V; ID = -2.9 A; Tj = 25 °C resistance - 69 85 mΩ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Nexperia PMXB75UPE 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain 4 D drain Simplified outline 1 Graphic s.


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