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PMZ200UNE Datasheet

Part Number PMZ200UNE
Manufacturers NXP
Logo NXP
Description N-channel Trench MOSFET
Datasheet PMZ200UNE DatasheetPMZ200UNE Datasheet (PDF)

SOT883 PMZ200UNE 30 V, N-channel Trench MOSFET 12 March 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Very fast switching • Low threshold voltage • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection: 2 kV HBM • Leadless ultra small package: 1.0 × 0.6 × 0.48 mm 3. Applica.

  PMZ200UNE   PMZ200UNE






Part Number PMZ200UNE
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet PMZ200UNE DatasheetPMZ200UNE Datasheet (PDF)

PMZ200UNE 30 V, N-channel Trench MOSFET 12 March 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Very fast switching • Low threshold voltage • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection: 2 kV HBM • Leadless ultra small package: 1.0 × 0.6 × 0.48 mm 3. Applications • .

  PMZ200UNE   PMZ200UNE







N-channel Trench MOSFET

SOT883 PMZ200UNE 30 V, N-channel Trench MOSFET 12 March 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Very fast switching • Low threshold voltage • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection: 2 kV HBM • Leadless ultra small package: 1.0 × 0.6 × 0.48 mm 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 1.4 A; Tj = 25 °C Min Typ Max Unit - - 30 V -8 - 8V [1] - - 1.4 A - 210 250 mΩ [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2. Scan or click this QR code to view the latest information for this product NXP Semiconductors PMZ200UNE 30 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline 1 3 2 Transparent top view DFN1006-3 (SOT883) Graphic symbol D G S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name PMZ200UNE DFN1006-3.


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