SOT883
PMZ290UNE
20 V, N-channel Trench MOSFET
14 May 2014
Product data sheet
1. General description
N-channel enhanc...
SOT883
PMZ290UNE
20 V, N-channel Trench
MOSFET
14 May 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
Trench
MOSFET technology Low threshold
voltage Very fast switching ElectroStatic Discharge (ESD) protection > 2 kV HBM Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm
3. Applications
Relay driver High-speed line driver Low-side loadswitch Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source
voltage
VGS gate-source
voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; ID = 500 mA; Tj = 25 °C
[1]
Min Typ Max Unit - - 20 V
-8 -
8V
- - 1A
- 290 380 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Scan or click this QR code to view the latest information for this product
NXP Semiconductors
PMZ290UNE
20 V, N-channel Trench
MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain
Simplified outline
1 3
2
Transparent top view
DFN1006-3 (SOT883)
Graphic symbol
D
G
S 017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMZ290UNE
DFN...