PMZB600UNEL

PMZB600UNEL 20 V, N-channel Trench MOSFET 5 December 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low leakage current Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.37 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 470 mΩ 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 0.6 A; Tj = 25 °C Min Typ Max - - 20 -8 - [1] - - 8 0.6 - 470 620 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. Unit V V A mΩ Nexperia PMZB600UNEL 20 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline 1 3 2 Transparent top view DFN1006B-3 (SOT883B) Graphic symbol G D S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name PMZB600UNEL DFN1006B-3 Description DFN1006B-3: leadless ultra small...