PMZB950UPEL
20 V, P-channel Trench MOSFET
5 December 2016
Product data sheet
1. General description
P-channel enhancem...
PMZB950UPEL
20 V, P-channel Trench
MOSFET
5 December 2016
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
Low leakage current Trench
MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.37 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 1.02 Ω
3. Applications
Relay driver High-speed line driver High-side load switch Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source
voltage
VGS gate-source
voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; ID = -500 mA; Tj = 25 °C
[1]
Min Typ Max
- - -20
-8 -
8
- - -500
- 1.02 1.4
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Unit V V mA
Ω
Nexperia
PMZB950UPEL
20 V, P-channel Trench
MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain
Simplified outline
Graphic symbol
1 3
2
Transparent top view
DFN1006B-3 (SOT883B)
G
D
S 017aaa259
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMZB950UPEL
DFN1...