Transistor. PN2222 Datasheet

PN2222 Datasheet PDF


Part PN2222
Description NPN Silicon Transistor
Feature PN2222 NPN Silicon Transistor Descriptions • General purpose application • Switching application P.
Manufacture AUK
Datasheet
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PN2222 Datasheet
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PN2222
PN2222
NPN Silicon Transistor
Descriptions
General purpose application
Switching application
PIN Connection
Features
Low Leakage current
Low collector saturation voltage enabling
low voltage operation
Complementary pair with PN2907
Ordering Information
Type NO.
Marking
PN2222
PN2222
Package Code
TO-92
B
TO-92
C
E
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
60
30
5
600
625
150
-55~150
Ta=25°C
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Delay time
Rise time
Storage time
Fall Time
Symbol
BVCBO
BVCEO
BVEBO
ICBO
hFE
VCE(sat)
fT
Cob
td
tr
ts
tf
Test Condition
IC=10μA, IE=0
IC=10mA, IB=0
IE=10μA, IC=0
VCB=60V, IE=0
VCE=10V, IC=10mA
IC=150mA, IB=15mA
VCE=20V, IC=20mA,
f=100MHz
VCB=10V, IE=0, f=1MHz
VCC=30Vdc, VBE(off)=0.5Vdc,
IC=150mAdc, IB1=15mAdc
VCC=30Vdc,IC=150mAdc,
IB1=IB2=15mAdc
Min.
60
30
5
-
100
-
Typ.
-
-
-
-
-
-
Ta=25°C
Max. Unit
-V
-V
-V
20 nA
--
0.4 V
250 -
- MHz
- - 8 pF
- - 10 ns
- - 25 ns
- - 225 ns
- - 60 ns
KSD-T0A003-000
1



PN2222
Electrical Characteristic Curves
Fig. 1 PC-Ta
Fig. 2 hFE-IC
PN2222
Fig. 3 VCE(sat)-IC
Fig. 4 Cob-VCB
KSD-T0A003-000
2






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