Amplifier. PN2484 Datasheet

PN2484 Datasheet PDF


Part PN2484
Description NPN Amplifier
Feature PN2484 / MMBT2484 Discrete POWER & Signal Technologies PN2484 MMBT2484 C E C BE TO-92 SOT-23 M.
Manufacture Fairchild Semiconductor
Datasheet
Download PN2484 Datasheet


PN2484 / MMBT2484 Discrete POWER & Signal Technologies PN2 PN2484 Datasheet
PN2484 Datasheet
Small Signal Transistors TO-92 Case (Continued) TYPE NO. DES PN2484 Datasheet
PN2484 Datasheet




PN2484
Discrete POWER & Signal
Technologies
PN2484
MMBT2484
C
C
BE
TO-92
SOT-23
Mark: 1U
E
B
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1µ to 50 mA.
Sourced from Process 07. See 2N5088 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
60
VCBO
Collector-Base Voltage
60
VEBO
Emitter-Base Voltage
5.0
IC Collector Current - Continuous
100
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
Max
PN2484
625
5.0
83.3
200
*MMBT2484
350
2.8
357
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation



PN2484
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
BVCBO
Collector-Base Breakdown Voltage
BVCEO
BVEBO
Collector-Emitter Breakdown
Voltage*
Emitter-Base Breakdown Voltage
ICBO Collector Cutoff Current
IEBO Emitter Cutoff Current
IC = 10 µA, IB = 0
IC = 10 mA, IE = 0
IC = 10 µA, IE = 0
VCB = 45 V, IE = 0
VCB = 45 V, IE = 0, TA = 150°C
VEB = 5.0 V, IC = 0
60 V
60 V
5.0 V
10 nA
10 µA
10 nA
ON CHARACTERISTICS
hFE DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 1.0 mA, VCE = 5.0 V
IC = 10 mA, VCE = 5.0 V*
IC = 1.0 mA, IB = 0.1 mA
IC = 1.0 mA, VCE = 5.0 V
250
800
0.35
0.95
SMALL SIGNAL CHARACTERISTICS
Cobo Output Capacitance
Cibo Input Capacitance
NF Noise Figure
*Pulse Test: Pulse Width 300 µs, Duty Cycle 3.0%
VCB =5.0 V, f = 140 kHz
VEB = 0.5 V, f = 140 kHz
IC = 10 µA, VCE = 5.0 V,
RS = 10k,f = 1.0 kHz,BW =200 Hz
6.0
6.0
3.0
V
V
pF
pF
dB






@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)