PN2907A

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PN2907A PNP switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 05 Philips Semiconductors Product specification PNP switching transistor FEATURES High current (max. 600 mA) Low voltage (max. 60 V). APPLICATIONS Switching and linear amplification. DESCRIPTION PNP switching transistor in a TO-92; SOT54 plastic package. NPN complement: PN2222A. 1 handbook, halfpage PN2907A PINNING PIN 1 2 3 collector base emitter DESCRIPTION 2 3 1 2 3 MAM280 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT toff PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency turn-off time Tamb ≤ 25 °C IC = −150 mA; VCE = −10 V IC = −50 mA; VCE = −20 V; f = 100 MHz ICon = −150 mA; IBon = −15 mA; IBoff = 15 mA open emitter open base CONDITIONS − − − − 100 200 − MIN. MAX. −60 −60 −600 500 300 − 365 MHz ns UNIT V V mA mW 1997 May 05 2 Philips Semiconductors Product specification PNP switching transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature ...