PNA2803M

Darlington Phototransistors PNA2803M Darlington Phototransistor Unit : mm Not soldered 2.0 max. For optical control systems Features Darlington output, high sensitivity Easy to combine with red and infrared light emitting diodes ø 3 plastic package ø3.8±0.2 ø3.0±0.2 15.0±1.0 4.5±0.3 5.0±0.2 0.6 2-0.8 max. 2-0.5±0.1 2 0.5±0.1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 20 5 30 100 –25 to +80 –30 to +100 Unit V V mA mW ˚C ˚C (1.5) 1.7 1.0 1 2.54 1: Emitter 2: Collector Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Response time Collector saturation voltage *1 Symbol ICEO ICE(L) λP θ tr, tf*2 VCE(sat) *3 Conditions VCE = 10V VCE = 10V, L = 2 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 1mA, RL = 100Ω ICE(L) = 1mA, L = 100 lx*1 lx*1 min 0.05 typ max 0.5 1.5 Unit µA mA nm deg. µs 850 30 150 0.7 1.5 V Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (T...