PNM3FD703E0-2
N-Channel MOSFET
Description
PNM3FD703E0-2 is designed for high speed switching applications The enhanceme...
PNM3FD703E0-2
N-Channel
MOSFET
Description
PNM3FD703E0-2 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance.
VDS(V) 40
MOSFET Product Summary
RDS(on)(Ω)
VGS(th)(V)
7.5@ VGS=10V
0.5 to 1.5
ID(A) 0.18
G D
S
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Drain-Source Breakdown
Voltage Zero Gate
Voltage Drain Current
Gate-Body Leakage Current Gate Threshold
Voltage
Static Drain-Source On-Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Turn-On Delay Time Turn-Off Delay Time
Symbol
Conditions
OFF CHARACTERISTICS
VDSS
ID =10μA,VGS=0V
IDSS VDS =40V,VGS=0V
IGSS VDS =0V,VGS=±20V
VGS(th)
VDS =VGS, ID =250μA
RDS(ON)
VGS=5V, ID =0.05A VGS=10V, ID =0.5A
DYNAMIC PARAMETERS
CISS CDSS CRSS
VGS=0V, VDS =25V, f=1MHz
SWITCHING PARAMETERS
td(on) td(off)
VDS=30V, VGS =10V, RG=25Ω, RL=150Ω
ID =0.2A
Min. Typ. Max. Units
40 -
-V
- - 0.5...
